Measurement of single - reflection power penalty for fiber optic terminal equipment
2.
A set of icpcvd system has been designed and manufactured through the analysis of the probe diagnosed results . when the output power of the rf is within 200w and the reflection power is within 0 . 6w , a good matching effect can be gained
3.
When the output power of the rf is within 500w and the reflection power is within 10w , a good matching effect can be gained . insb - in material in the icp etching system is etched by chc1f2 plasma . through the sem analysis of the etching result , it can be observed that the sidewall is smooth , flat and anisotropic
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