| 11. | In a PIN diode, the depletion region exists almost completely within the intrinsic region.
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| 12. | The factor mainly accounts for carrier recombination as the charge carriers cross the depletion region.
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| 13. | This structure suggests that there is no depletion region to separate the device from the substrate.
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| 14. | The depletion region will quickly dissipate.
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| 15. | The depletion region of a PIN structure extends across the intrinsic region, deep into the device.
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| 16. | However, the width of the depletion region ( called the depletion width ) cannot grow without limit.
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| 17. | But only those electron-hole pairs generated in and near the depletion region contribute to current generation.
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| 18. | The shape of the depletion region creates a wider channel, allowing more current to flow through it.
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| 19. | Therefore, letting D and \ Delta V represent the entire depletion region and the potential difference across it,
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| 20. | Because the length of the depletion region is narrow and the band gap is high, electrons can tunnel.
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