In coarse-grain power gating, the power-gating transistor is a part of the power distribution network rather than the standard cell.
12.
:Here's the article that is referenced by BBC News : Self-Heating Effects In Polysilicon Source Gated Transistors ( 2015 ).
13.
Bower s invention underwent much controversy when Kerwin, Klein, and Sarace argued that they were the actual inventors of the self-aligned gate transistors.
14.
In September 2002, Intel announced their creation of " triple-gate transistors " to maximize " transistor switching performance and decreases power-wasting leakage ".
15.
In 1966, Bower and Dill presented the first publication the self-aligned gate transistor at the International Electron Device Meeting in Washington D . C ..
16.
Using low-power methods of storing charges on floating-gate transistors, Impinj developed applications for flash memory storage and radio frequency identity tags ( RFID ).
17.
After validating and characterizing the process using a test pattern he designed, Federico Faggin made the first working MOS silicon gate transistors and test structures by April 1968.
18.
In the floating gate transistor, the gate is attached to a layer that traps electrons, leaving it switched on ( or off ) for extended periods of time.
19.
When, if ever, is Intel likely to licence out the tri-gate transistor technology it's using for Merlin 00 : 18, 14 November 2011 ( UTC)
20.
That IEDM publication described the self-aligned gate transistor fabricated with both metal and polysilicon as the gate material and using both ion implantation and diffusion to form the source and drains.
