Essentially, the semiconductor's majority carrier concentration will remain ( relatively ) unchanged, while the minority carrier concentration sees a large increase.
12.
Only majority carriers ( electrons in n-type material or holes in p-type ) can flow through a semiconductor for a macroscopic length.
13.
Instead, a measure of the profile of the doping gradients provides an " effective " profile that better matches the profile of the majority carrier density.
14.
Once the minority carrier enters the drift region, it is'swept'across the junction and, at the other side of the junction, becomes a majority carrier.
15.
If an intrinsic semiconductor is doped with a donor impurity then the majority carriers are electrons; if the semiconductor is doped with an acceptor impurity then the majority carriers are holes.
16.
If an intrinsic semiconductor is doped with a donor impurity then the majority carriers are electrons; if the semiconductor is doped with an acceptor impurity then the majority carriers are holes.
17.
In " figure 1 ( a ) " it is observed that the free majority carriers are scattered throughout the structure because of the absence of an external electric field.
18.
Minority carriers play an important role in inversion layer ), so conventionally the source and drain designation for the carriers is adopted, and FETs are called " majority carrier " devices.
19.
In the threshold voltage page the definition is the voltage required to push all the majority carriers away from the gate creating a depletion layer ( at higher voltages the inversion layer forms ).
20.
Although the electrons penetrate only a short distance into the p-type material, the electric current continues uninterrupted, because holes ( the majority carriers ) begin to flow in the opposite direction.
