| 11. | Similarly, holes diffusing into the N-doped layer become minority carriers and tend to recombine with electrons.
|
| 12. | The physical explanation for collector current is the concentration of minority carriers in the base region.
|
| 13. | The minority carrier diffusion length is critical in determining the performance of devices such as gain.
|
| 14. | Minority carriers ( holes in this case ) diffuse to the attached electron donors to recombine.
|
| 15. | The heavily doped layer acts as a current sink where excess minority carriers can quickly recombine.
|
| 16. | The BARITT diode uses Injection and Transit-time properties of minority carriers to produce a negative resistance at microwave frequencies.
|
| 17. | This results in a complete elimination of minority carrier injection from the lower PN junction and faster turn-off times.
|
| 18. | This technique is useful for measuring the minority carrier lifetime of III-V semiconductors like gallium arsenide ( GaAs ).
|
| 19. | A definition in semiconductor physics, "'carrier lifetime "'is defined as the average time it takes for a minority carrier to recombine.
|
| 20. | Because this barrier is located in the oppositely doped material, the injected carriers at the barrier position are now minority carriers.
|
