| 11. | Kroemer became an early pioneer in molecular beam epitaxy, concentrating on applying the technology to untried new materials.
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| 12. | Molecular beam epitaxy has been demonstrated to be capable of depositing structures consisting of piezoelectric and magnetostrictive components.
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| 13. | He pioneered the technique of molecular beam epitaxy, a method of growing crystalline solids from layers of selected elements.
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| 14. | In 2009, molecular beam epitaxy has been used to deposit oxide materials for advanced electronic, magnetic and optical applications.
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| 15. | Molecular beam epitaxy ( MBE ) is an established technique for growing semiconductor devices with atomic monolayer thickness control.
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| 16. | In 2009 he was awarded the Rusnanoprize, an international nanotechnology award, for his work related to molecular beam epitaxy.
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| 17. | Some LaAlO 3 / SrTiO 3 interfaces have also been synthesized by molecular beam epitaxy, sputtering, and atomic layer deposition.
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| 18. | It can be found in molecular beam epitaxy chambers to protect the growth areas from thermal radiation from hot sources.
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| 19. | This high supersaturation causes a very large nucleation density on the surface as compared to molecular beam epitaxy or sputtering deposition.
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| 20. | The wetting layer is epitaxially grown onto a surface using a molecular beam epitaxy ( MBE ) chamber at high temperatures.
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