| 11. | MQW devices must be operated at high reverse bias fields to achieve good contrast ratios.
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| 12. | In this diode the voltage remains relatively constant ( independent of current ) when it is connected in reverse bias.
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| 13. | Under reverse bias, the diode ordinarily does not conduct ( save a small dark current or I s leakage ).
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| 14. | When the reverse bias breakdown voltage is exceeded, a conventional diode is subject to high current due to avalanche breakdown.
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| 15. | In either formulation, r _ O varies with DC reverse bias V _ { CB }, as is observed in practice.
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| 16. | The small current that flows under high reverse bias is then the result of thermal generation of electron-hole pairs in the layer.
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| 17. | When this energy level is higher than that of the electrons, no tunnelling will occur, and the diode is in reverse bias.
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| 18. | The collector depletion region also increases under reverse bias, more than does that of the base, because the collector is less heavily doped.
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| 19. | This depletion region is much larger than in a PN diode, and almost constant-size, independent of the reverse bias applied to the diode.
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| 20. | There is also a recovery concern where the current will not decrease immediately when it is switched from forward bias to reverse bias.
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