He found that the valence-electron to atom ratio is a good predictor of stacking fault energy, even when the alloying element is changed.
12.
It has been demonstrated that Wright etch is superior in revealing stacking faults and dislocation etch figures when compared with those revealed by Sirtl and Secco etchings.
13.
The 7? reconstruction is modeled according to a dimer-adatom-stacking fault ( DAS ) model constructed by many research groups over a period of 25 years.
14.
Frequently only a portion of the model is used ( typically the term involving the stacking fault energy ) as the other terms are often unknown and difficult to measure.
15.
Stacking fault energy is heavily influenced by a few major factors, specifically base metal, alloying metals, percent of alloy metals, and valence-electron to atom ratio.
16.
However, if the metal has a high number of stacking faults ( a difference in stacking sequence between atomic planes ) it will be less apt to cross-slip at the dislocations.
17.
He and his co-worker Richard Finch first identified oxygen-induced stacking faults and achieved the first transmission electron microscopy on semiconductors with J . Washburn and G . Thomas at UC Berkeley.
18.
In the opposite case ( higher band gap in the stacking fault ), it constitutes an energy barrier in the band structure of the crystal that can affect the current transport in semiconductor devices.
19.
This is still useful as it implies that all other things remaining equal, reducing the stacking fault energy, a property that is a function of the alloying elements, will allow for better grain refinement.
20.
As a consequence, when the crystal phase of a stacking fault has a lower band gap than the surrounding phase, it forms a quantum well, which in photoluminescence experiments leads to light emission at lower energies ( longer wavelengths ) than for the bulk crystal.
