The double ridge of the type region ( " Doppelwallri?", with an outer and inner ridge ) is a result of two superimposed sequences of glacial deposits which indicates that the Riss was subdivided into at least two stadials.
12.
In more complex structures, the p-type and n-type regions may be embedded between the mirrors, requiring a more complex semiconductor process to make electrical contact to the active region, but eliminating electrical power loss in the DBR structure.
13.
Likewise, holes from the p-type region near the p n interface begin to diffuse into the n-type region, leaving behind negatively charged ions in the p region and recombining with electrons, forming positive ions in the n region.
14.
Likewise, holes from the p-type region near the p n interface begin to diffuse into the n-type region, leaving behind negatively charged ions in the p region and recombining with electrons, forming positive ions in the n region.
15.
The flow of holes from the p-type region into the n-type region is exactly analogous to the flow of electrons from N to P ( electrons and holes swap roles and the signs of all currents and voltages are reversed ).
16.
The flow of holes from the p-type region into the n-type region is exactly analogous to the flow of electrons from N to P ( electrons and holes swap roles and the signs of all currents and voltages are reversed ).
17.
This can be used for the simultaneous formation of ohmic contacts and diodes, as a diode will form between the silicide and lightly doped n-type region, and an ohmic contact will form between the silicide and the heavily doped n-or p-type region.
18.
This can be used for the simultaneous formation of ohmic contacts and diodes, as a diode will form between the silicide and lightly doped n-type region, and an ohmic contact will form between the silicide and the heavily doped n-or p-type region.
19.
Therefore, the macroscopic picture of the current flow through the diode involves electrons flowing through the n-type region toward the junction, holes flowing through the p-type region in the opposite direction toward the junction, and the two species of carriers constantly recombining in the vicinity of the junction.
20.
Therefore, the macroscopic picture of the current flow through the diode involves electrons flowing through the n-type region toward the junction, holes flowing through the p-type region in the opposite direction toward the junction, and the two species of carriers constantly recombining in the vicinity of the junction.
