The chalcogenide resistance being a necessarily larger resistance than the diode entails that the operating voltage must exceed 1 V by a wide margin to guarantee adequate forward bias current from the diode.
22.
:: : Erm, actually for a silicon diode under forward bias, its resistance is fairly accurately given in ohms by the expression 25 / Ie where Ie is in milliamps.
23.
Junction field-effect transistors ( JFETs ) are depletion mode, since the gate junction would forward bias if the gate were taken more than a little from source toward drain voltage.
24.
Specifically, a SERIES circuit does it's limiting in reverse bias ( zero current ) and a PARALLEL circuit does it's LIMITING in forward bias ( zero current ).
25.
In his patent the Schottky diode prevented the transistor from saturating by minimizing the forward bias on the collector-base transistor junction, thus reducing the minority carrier injection to a negligible amount.
26.
Burn-in oven applications can be used in numerous different applications such as high-dissipation forward bias, high-temperature reverse bias, dynamic and static burn-in of microprocessors and other semiconductor devices.
27.
In some designs, the Zener diode may be replaced with another similarly functioning device, especially in an ultra-low-voltage scenario, like ( under forward bias ) several normal diodes or LEDs in series.
28.
Under forward bias, the half-occupancy lines for holes and electrons cannot remain flat throughout the device as they are when in equilibrium, but become " quasi-Fermi levels " that vary with position.
29.
L, where the current " I " is the difference between the short-circuit current and current due to forward bias of the junction, as indicated by the equivalent circuit ( neglecting the parasitic resistances ).
30.
For very high Schottky barriers where ? B is a significant fraction of the band gap of the semiconductor, the forward bias current may instead be carried " underneath " the Schottky barrier, as minority carriers in the semiconductor.
