The bonding temperature needs to be high enough to reduce the viscosity of the glass material and ensures a good wetting of the bond surface, but also low enough to prevent overspreading of the glass frit material.
22.
Wafer-level packaging is implemented before wafer dicing, as shown in Fig . 3 ( a ), and is based on anodic, metal diffusion, metal eutectic, glass frit, polymer adhesive, and silicon fusion wafer bonding.
23.
Glass frit bonding can be used for many surface materials, e . g ., silicon with hydrophobic and hydrophilic surface, silicon dioxide, silicon nitride, aluminium, titanium or glass, as long as the CTE are in the same range.
24.
This low melting glass paste is milled into powder ( grain size 2 Al 3 [ AlSi 5 O 18 ] ) or barium silicate, are added to the melted glass paste to influence properties, i . e . lowering the mismatch of thermal expansion coefficients between silicon and glass frit.
