Hot electrons from higher energy states carry more thermal energy than cold electrons, while electrical conductivity is rather insensitive to the energy distribution of carriers because the amount of charge that electrons carry, does not depend on their energy.
22.
They generally exhibit hot electrons that are powered by the alternating electric field, and a neutral and ion component, which is significantly colder due the low efficiency of the energy transfer between light electrons and heavy neutrals and ions.
23.
This process, referred to as " hot electron pre-heating ", carried away a great amount of the laser's energy, and also caused the core of the target to heat before it reached maximum compression.
24.
Attempts to correct or compensate for the hot electron effect in a MOSFET may involve locating a diode in reverse bias at gate terminal or other manipulations of the device ( such as lightly doped drains or double-doped drains ).
25.
However, the fuel is also losing heat through x-ray losses and hot electrons leaving the fuel area, so the rate of alpha heating must be greater than these losses, a condition known as " bootstrapping ".
26.
Our idea is to keep the compression phase as cool as possible until a blast of hot electrons enters as a kind of spark plug, to initiate very rapid ignition of the whole capsule and produce a much higher yield of fusion power.
27.
Studies of the causes of the lower than expected compression led to the realization that the laser was coupling strongly with the hot electrons ( ~ 50 keV ) in the plasma which formed when the outer layers of the target were heated, via stimulated raman scattering.
28.
ICF attempts to use a laser to heat and compress a target containing fusion fuel, and it was found in experiments with the Shiva laser that the infrared frequencies generated by the laser lost most of its energy in the hot electrons being generated early in the heating process.
29.
Sure, I'm only considering dynamic power dissipation using the simple " CV 2 f " type model, which doesn't include non-ideal current components like hot electron effects and Fowler-Nordheim tunneling, nor does it include power losses in interconnects and contacts.
30.
"' Herbert Kroemer "'( born August 25, 1928 ), a professor of electrical and computer engineering at the University of California, Santa Barbara, received his Ph . D . in theoretical physics in 1952 from the University of G�ttingen, Germany, with a dissertation on hot electron effects in the then-new transistor, setting the stage for a career in research on the physics of semiconductor devices.
