"' Current sense amplifiers "'( also called current shunt amplifiers ) are special-purpose amplifiers that output a voltage proportional to the current flowing in a power rail.
22.
A SONOS memory array is constructed by fabricating a grid of SONOS transistors which are connected by horizontal and vertical control lines ( wordlines and bitlines ) to peripheral circuitry such as address decoders and sense amplifiers.
23.
By interleaving the memory ( e . g . cells 0, 4, 8, etc . are stored together in one rank ), sequential memory accesses can be performed more rapidly because sense amplifiers have 3 cycles of idle time for recharging, between accesses.
24.
To write, first the data is written to a channel buffer ( typically previous initialized using a Prefetch command ), then a Restore command, with the same parameters as the Prefetch command, copies a segment of data from the channel to the sense amplifier array.
25.
It presents a two-bit bank address ( BA0 & ndash; BA1 ) and a 13-bit row address ( A0 & ndash; A12 ), and causes a read of that row into the bank's array of all 16, 384 column sense amplifiers.
26.
The pacemaker generator is a hermetically sealed device containing a power source, usually a lithium battery, a sensing amplifier which processes the electrical manifestation of naturally occurring heart beats as sensed by the heart electrodes, the computer logic for the pacemaker and the output circuitry which delivers the pacing impulse to the electrodes.
27.
To read from VCSDRAM, after the Active command, a " Prefetch " command is required to copy data from the sense amplifier array to the channel SDRAM . This command specifies a bank, 2 bits of column address ( to select the segment of the row ), and 4 bits of channel number.
28.
VCM inserts an SRAM cache of 16 " channel " buffers, each 1 / 4 row " segment " in size, between DRAM banks'sense amplifier rows and the data I / O pins . " Prefetch " and " Restore " command, unique to VCSDRAM, copy data between the DRAM's sense amplifier row and the channel buffers, while the equivalent of SDRAM's Read and Write commands specify a channel number to access.
29.
VCM inserts an SRAM cache of 16 " channel " buffers, each 1 / 4 row " segment " in size, between DRAM banks'sense amplifier rows and the data I / O pins . " Prefetch " and " Restore " command, unique to VCSDRAM, copy data between the DRAM's sense amplifier row and the channel buffers, while the equivalent of SDRAM's Read and Write commands specify a channel number to access.
