| 31. | This current can also be expressed in terms of the LDOS near the Fermi level of the sample at the tip surface,
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| 32. | Thus, dI / dV diverges as V approaches 0, preventing investigation of the local electronic structure near the Fermi level.
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| 33. | So only electrons within a limited wavelength range near the Fermi level are scattered resulting in a density modulation around the impurity like
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| 34. | A material whose Fermi level falls in a gap between bands is an insulator or semiconductor depending on the size of the bandgap.
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| 35. | This covalent aryl bond forms with extremely high affinity for electrons with energies near the Fermi level, E f of the nanotube.
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| 36. | Where is the Fermi level, is the minimum energy of the conduction band, and is a concentration coefficient that depends on temperature.
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| 37. | For the case of electrons in a semiconductor,, the point of symmetry, is typically called the Fermi level or electrochemical potential.
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| 38. | The Fermi level of the gate metal is matched to the pinning point, which is 1.2 eV below the conduction band.
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| 39. | As bias increase, the valence band of the p-side gets pulled down, and so did the hole quasi Fermi level.
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| 40. | Particularly, the quasi-Fermi levels of electrons and holes are uniformly split through the cell and the split equals the applied voltage.
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