To become hot and enter the conduction band of SiO 2, an electron must gain a kinetic energy of ~ 3.2 eV . For holes, the valence band offset in this case dictates they must have a kinetic energy of 4.6 eV . The term " hot electron " comes from the effective temperature term used when modelling carrier density ( i . e ., with a Fermi-Dirac function ) and does not refer to the bulk temperature of the semiconductor ( which can be physically cold, although the warmer it is, the higher the population of hot electrons it will contain all else being equal ).
32.
To become hot and enter the conduction band of SiO 2, an electron must gain a kinetic energy of ~ 3.2 eV . For holes, the valence band offset in this case dictates they must have a kinetic energy of 4.6 eV . The term " hot electron " comes from the effective temperature term used when modelling carrier density ( i . e ., with a Fermi-Dirac function ) and does not refer to the bulk temperature of the semiconductor ( which can be physically cold, although the warmer it is, the higher the population of hot electrons it will contain all else being equal ).
33.
The case most favorable to p 11 B relative to D-T fuel is a ( hypothetical ) confinement device that only works well at ion temperatures above about 400 keV, in which the reaction rate parameter is equal for the two fuels, and that runs with low electron temperature . p 11 B does not require as long a confinement time because the energy of its charged products is two and a half times higher than that for D-T . However, relaxing these assumptions, for example by considering hot electrons, by allowing the D-T reaction to run at a lower temperature or by including the energy of the neutrons in the calculation shifts the power density advantage to D-T.
