The IBM project latched on to the work of two European scientific teams who had discovered a spin-related effect known as giant magnetoresistance in 1988.
32.
MRAM's reads the memory using the tunnel magnetoresistance effect, allowing it to read the memory both non-destructively and with very little power.
33.
The phase fluctuations are responsible for such unusual physical properties as high-temperature superconductivity in copper oxides and a colossal magnetoresistance in manganese and cobalt oxides.
34.
Currently exchange bias is used to pin the harder reference layer in spin valve readback heads and MRAM memory circuits that utilize the giant magnetoresistance or superparamagnetic.
35.
The so-called tunneling magnetoresistance ( TMR ) is very similar to GMR and based on the spin dependent tunneling of electrons through adjacent ferromagnetic layers.
36.
:: : : I'm surprised that nobody has mentioned the actual effect utilized to store data in most modern hard disks, giant magnetoresistance.
37.
A material exhibits linear magnetoresistance if magnetic fields change the material's electrical resistance resistance by an amount proportional to the strength of the magnetic field.
38.
Using this electromagnet, he investigated the magnetoresistance of various metals, and discovered that at these very high magnetic fields, many metals exhibit linear magnetoresistance.
39.
Using this electromagnet, he investigated the magnetoresistance of various metals, and discovered that at these very high magnetic fields, many metals exhibit linear magnetoresistance.
40.
If the antiferromagnetic spin orientations in the multiferroic pinning layer can be electrically tuned, then magnetoresistance of the device can be controlled by the applied electric field.
