The alternating layers of the two different semiconductors which form the quantum heterostructure may be grown on to a substrate using a variety of methods such as molecular beam epitaxy ( MBE ) or metalorganic vapour phase epitaxy ( MOVPE ), also known as metalorganic chemical vapor deposition ( MOCVD ).
32.
For example, lithium tantalate, LiTaO 3, films are desirable for their non-linear optical properties and have been prepared by first reacting tantalum ( V ) ethoxide with lithium dipivaloylmethanate, LiCH ( COC ( CH 3 ) 3 ) 2, to prepare a precursor suitable for metalorganic vapour phase epitaxy ( a form of chemical vapor deposition ).
33.
Reversing this, connecting the down tube to the source of vacuum, places the inlet of the vacuum directly above the condensate, increasing the chances of vapour phase condensate moving up the ( uncooled ) down tube ( towards the pump ) or, should the trap begin to fill to an appreciable volume, liquid phase condensate being pulled into the pump.
34.
In one of these articles Fowler et al . describe the laboratory preparation of numerous perfluorocarbons by the vapour phase reaction of a hydrocarbon with cobalt ( III ) fluoride, at a pilot plant scale, in particular, perfluoro-n-heptane and perfluorodimethylcyclohexane ( mixture of 1, 3-isomer and 1, 4 isomer ), and on an industrial scale by Du Pont.
35.
"' Hydride vapour phase epitaxy "'( "'HVPE "') is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides.
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This gave the answer to the millennia-old question whether there is water on or in Earth s moon when it led to the discovery of water in its vapour phase by the CHACE ( CHandra s Altitudinal Composition Explorer ) payload on board the Moon Impact Probe ( MIP ) and complementarily in its solid phase by the Moon Mineralogy Mapper ( M3 ) payload on board the main orbiter in the Chandrayaan I mission.
37.
"' Trimethylindium "'( abbr : TMI or TMIn ), In ( CH 3 ) 3, ( CAS # : 3385-78-2 ) is the preferred organometallic source of indium for metalorganic vapour phase epitaxy ( MOVPE ) of indium-containing compound semiconductors, such as InP, InAs, InN, InSb, GaInAs, InGaN, AlGaInP, AlInP, AlInGaNP, etc . TMI is a white, crystalline and sublimable solid, with melting point 88 �C . TMI is pyrophoric ( ignites spontaneously upon contact with air ), and its decomposition is often found to be uncontrollable as the temperature of its surrounding exceeds its melting point ( i . e . > 88 �C ) and reaches 101 �C and above.
