Where R _ { c } and R _ { ch } are contact and channel resistancies, respectively, L / W is the channel length / width, C is gate insulator capacitance ( per unit of area ), \ mu is carrier mobility, and V _ { gs } and V _ { ds } are gate-source and drain-source voltages.
42.
As an application example, the steady-state space-charge-limited current across a piece of silicon with a charge carrier mobility of 1500 cm 2 / V-s, a dielectric constant of 11.9, an area of 10 " 8 cm 2 and a thickness of 10 " 4 cm can be calculated by an on line calculator as 126.4uA at voltage 3V.
