The surfaces of semiconductors are often depletion regions ( or space charge regions ) where a built-in electric field due to defects has swept out mobile charge carriers.
42.
When the reverse bias is applied, the electric field in the depletion region is increased, pulling the electrons and holes further apart than in the zero bias case.
43.
At equilibrium in a p n junction, the forward diffusion current in the depletion region is balanced with a reverse drift current, so that the net current is zero.
44.
As a result of the separation of charges a depletion region is formed on the polysilicon-oxide interface, which has a direct effect on the channel formation in MOSFET.
45.
Based on the high field intensity in the depletion region or in the gap at the interface, both wafer surfaces are pressed together at a specific bond voltage and bond temperature.
46.
Understanding the depletion region is key to explaining modern semiconductor electronics : diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena.
47.
Understanding the depletion region is key to explaining modern semiconductor electronics : diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena.
48.
Thus, any current that flows is due to the very weak process of carrier generation inside the depletion region due to " generation-recombination defects " in this region.
49.
In the photodiode, reverse current is introduced using creation of holes and electrons in the depletion region by incident light, thus converting a portion of the incident light into an electric current.
50.
It is composed of a P-N junction with a wide depletion region, inside which two additional contacts are made : the " injector " and the " modulator ".
