EPROMs can't be erased electrically and are programmed via hot carrier injection onto the floating gate.
2.
The hot carrier cells are in their infancy but are beginning to move toward the experimental stage.
3.
Large electric fields in MOSFETs imply the presence of high-energy carriers, referred to as "'hot carriers "' .
4.
The idea behind the hot carrier cell is to utilize some of that incoming energy which is converted to heat.
5.
The accumulation of damage resulting degradation in device behavior due to hot carrier injection is called "'hot carrier degradation "' .
6.
The accumulation of damage resulting degradation in device behavior due to hot carrier injection is called "'hot carrier degradation "' .
7.
NOR flash memory exploits the principle of hot carriers injection by deliberately injecting carriers across the gate oxide to charge the floating gate.
8.
Consequent effects include increased leakage current and possible damage to the encasing dielectric material if the hot carrier disrupts the atomic structure of the dielectric.
9.
The relaxation of a large number of hot carriers leads to a high generation rate of optical phonons which exceeds the decay rate into acoustic phonons.
10.
The injection transistor is connected normally and specific voltages are applied to create hot carriers that are then injected via an electric field into the floating gate.
