| 1. | Auger recombination occurs orders of magnitude faster than the radiative recombination.
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| 2. | Introducing an IB greatly increases non-radiative recombination mechanisms.
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| 3. | The exact reverse of radiative recombination is light absorption.
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| 4. | Non-radiative recombination occurs primarily at such sites.
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| 5. | This process is called radiative recombination.
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| 6. | The latter originate, e . g ., from the radiative recombination of excitons, quantum optical correlations.
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| 7. | If the centre with the hole is a luminescence center ( radiative recombination centre ) emission of light will occur.
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| 8. | Also, self-consistent computer simulations have shown that radiative recombination is focused where regions are rich of indium.
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| 9. | Charge carrier trapping on QDs increases the probability of non-radiative recombination, which reduces the fluorescence quantum yield.
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| 10. | Since silicon is an indirect band gap semiconductor, the quantum yield of radiative recombination in this material is very low.
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