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base transistor वाक्य

"base transistor" हिंदी मेंbase transistor in a sentence
उदाहरण वाक्यमोबाइल
  • Scientists at Lucent Technology's Bell Labs have examined the future of the silicon-dioxide-based transistor that is used in billions of chips and have pronounced the technology both half full and half empty.
  • In 1956, Philco had developed an " improved " higher-speed version of its original surface-barrier transistor, which was used in military applications and was called the surface-barrier diffused-base transistor ( SBDT ).
  • The Cray-2 appeared to be pushing the limits of speed of silicon-based transistors at 4.1 ns ( 244 MHz ), and it did not appear that anything more than another 2x would be possible.
  • IBM plans to announce on Monday what it calls the world's fastest silicon-based transistor, an advanced device that it said would drive the highest-performance communications systems to speeds of 100 gigahertz within two years.
  • Scientists at Lucent Technology's Bell Labs recently highlighted a seemingly jarring fact : The use of silicon-dioxide based transistors to make ever smaller microchips, as has been done for decades, may have to end soon.
  • The advance is based on silicon germanium-based transistors, which the company said last June had achieved individual switching speeds of 210 gigahertz _ the ability to switch on and off more than 200 billion times per second.
  • The plant, which combines new technology such as copper wiring, silicon-on-insulator-based transistors and improved insulation, is part of a total dlrs 5 billion capital investment IBM launched two years ago to expand its chip-making sites around the world.
  • Without further advances in the miniaturization of silicon-based transistors, hopes for continued progress would have to be based on unproven technologies _ alternative materials, new transistor designs and advances like molecular computing, in which single molecules act as the digital on-off switches.
  • Without further advances in the miniaturization of silicon-based transistors, hopes for continued progress would have to be based on technologies that are promising but unproved : new materials, new transistor designs and advances like molecular computing, in which single molecules act as digital on-off switches.
  • The "'post-alloy diffused transistor "'( "'PADT "'), or "'post-alloy diffused-base transistor "', was developed by Philips ( but GE and RCA filed for patent and Jacques Pankove of RCA received patent for it ) as an improvement to the germanium alloy-junction transistor, it offered even higher speed.
  • The term " memory ", meaning " primary storage " or " main memory ", is often associated with addressable semiconductor memory, i . e . integrated circuits consisting of silicon-based transistors, used for example as primary storage but also other purposes in computers and other areal density than DRAM.
  • Thus, inasmuch as chemical empirical formulas pinpoint the locations of branching ions that are attached to a particular molecule, the dopant of silicon based transistors and other such electronic components will have the location identified of each dopant atom or molecule, along with the associated characteristic of the device based on the named locations.
  • The technology and market idea behind the foundation of NanGate was to address and solve the inherent shortcomings of standard cell based transistors most often arranged in the pull-up / pull-down fashion of CMOS . A typical standard-cell library for e . g . 40 nanometer CMOS has 500-1500 standard cells and about 150-300 different logic functions.
  • Unlike silicon transistors which switch off due to power surges, GaN transistors are typically depletion mode ( i . e . on / resistive when the gate-source voltage is zero ), however the company along with US government and university assistance developed GaN transistors via materials engineering to also be available as enhancement mode ( " normally off " ) devices, just as silicon based transistors.
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