ohmic contact वाक्य
उदाहरण वाक्य
मोबाइल
- Generally the term " ohmic contact " implicitly refers to an ohmic contact of a metal to a semiconductor, where achieving ohmic behaviour is possible but requires careful technique.
- Generally the term " ohmic contact " implicitly refers to an ohmic contact of a metal to a semiconductor, where achieving ohmic behaviour is possible but requires careful technique.
- For the junction to admit electrons easily in both directions ( ohmic contact ), the barrier height must be small in at least some parts of the junction surface.
- Low-resistance, stable ohmic contacts to semiconductors are critical for the performance and reliability of semiconductor devices, and their preparation and characterization are major efforts in circuit fabrication.
- However, ohmic contact resistance heating is generated when peak current flows through these individual microscopic contacting points, which are critical areas for the overall internal resistance of the capacitor.
- Polysilicon may also be employed as a resistor, a conductor, or as an ohmic contact for shallow junctions, with the desired electrical conductivity attained by doping the polysilicon material.
- Different semiconductors exhibit this Fermi level pinning to different degrees, but a technological consequence is that ohmic contacts are usually difficult to form in important semiconductors such as silicon and gallium arsenide.
- Both ohmic contacts and Schottky barriers are dependent on the Schottky barrier height, which sets the threshold for the excess energy an electron requires to pass from the semiconductor to the metal.
- The probes produce a negligible probe to silicon resistance ( nearly ohmic contact ) over the entire resistivity range for both n-type ( rich in holes and rich in electrons respectively ).
- Not all metal semiconductor junctions form a rectifying Schottky barrier; a metal semiconductor junction that conducts current in both directions without rectification, perhaps due to its Schottky barrier being too low, is called an ohmic contact.
- For electrical initiation, a momentary contact at 10A / 5V is sufficient; for ohmic contact, 120-150 amperes is needed for a 15 micrometer diameter contact, and 250-300 A for a 300 micrometer contact.
- Lightly doped p-type regions pose a problem, as the resulting contact has too high a resistance for a good ohmic contact, but too low a forward voltage and too high a reverse leakage to make a good diode.
- However, your first sentence is still true; most practical ohmic contacts are realized by making the Schottky barrier so thin that a large tunneling ( field electron emission ) current dominates the I-V characteristics of the metallurgical junction.
- Modern ohmic contacts to silicon such as titanium-tungsten disilicide are usually silicides made by CVD . Contacts are often made by depositing the transition metal and forming the silicide by annealing with the result that the silicide may be non-stoichiometric.
- Dr . Lau also worked on Ohmic contact technology for GaN and AlGaN / GaN HEMT . He noticed that the presence of a small quantity of moisture in the rapid thermal annealing chamber is particularly bad for Ohmic contact on AlGaN / GaN HEMT wafers.
- Dr . Lau also worked on Ohmic contact technology for GaN and AlGaN / GaN HEMT . He noticed that the presence of a small quantity of moisture in the rapid thermal annealing chamber is particularly bad for Ohmic contact on AlGaN / GaN HEMT wafers.
- Metal metal ohmic contacts are relatively simpler to make, by ensuring direct contact between the metals without intervening layers of insulating contamination or oxidation; various techniques are used to create ohmic metal-metal junctions ( soldering, welding, deposition, electroplating, etc . ).
- Structures as simple as an ohmic contact ( the electrical interface between a semiconductor device and a conducting wire ) and as complicated as HFETs / HEMTs, RTDs, several types of laser diode, etc; all are designed to use quantum tunneling in their primary operation.
- This can be used for the simultaneous formation of ohmic contacts and diodes, as a diode will form between the silicide and lightly doped n-type region, and an ohmic contact will form between the silicide and the heavily doped n-or p-type region.
- This can be used for the simultaneous formation of ohmic contacts and diodes, as a diode will form between the silicide and lightly doped n-type region, and an ohmic contact will form between the silicide and the heavily doped n-or p-type region.
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