ion implantation वाक्य
उदाहरण वाक्य
मोबाइल
- Her areas of interest include Surface Science, Thin film growth and Growth Modes at Early Stages, Electronic Structure / Band Structure of thin films, Nanostructures and Nanoclusters, Surface Modifications with Ion Implantation, Ion Beam Assisted Structural Modifications.
- For semiconductors doped through diffusion or surface peaked ion implantation we define the sheet resistance using the average resistivity \ overline { \ rho } = 1 / \ overline { \ sigma } of the material:
- The University department of physics, under Joshi's guidance, took pioneering efforts in developing an Ion implantation facility in the early seventies and has been in the forefront in studying different aspects of ion beam modifications of material properties.
- Wafers are contaminated by previous process steps ( e . g . metals bombarded from chamber walls by energetic ions during ion implantation ), or they may have gathered polymers from wafer boxes, and this might be different depending on wait time.
- The most commonly known application of nuclear physics is nuclear power generation, but the research has led to applications in many fields, including nuclear medicine and magnetic resonance imaging, nuclear weapons, ion implantation in materials engineering, and radiocarbon dating in geology and archaeology.
- Ion implantation was developed as a method of producing the p-n junction of photovoltaic devices in the late 1970s and early 1980s, along with the use of pulsed-electron beam for rapid annealing, although it has not to date been used for commercial production.
- The most commonly known applications of nuclear physics are nuclear power generation and nuclear weapons technology, but the research has provided application in many fields, including those in nuclear medicine and magnetic resonance imaging, ion implantation in materials engineering, and radiocarbon dating in geology and archaeology.
- However, since aluminum could not withstand the high temperature required for the conventional doping of the source and drain junctions, Dr . Bower proposed to use ion implantation, a new doping technique still in development at Hughes Aircraft, his employer, and not yet available at other labs.
- This energy usually ranges from a few eV up to a few keV . At low energy molecular ion beams are deposited intact ( soft landing ), while at a high deposition energy molecular ions fragment and atomic ions penetrate further into the material, a process known as ion implantation.
- To Bower and to the attorneys who litigated the Bower U . S . 3, 472, 712 patent it was determined in the courts that his patent covered the general principal of using a gate as mask for both metal and polysilicon gates using ion implantation to establish the source and drain regions.
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